Method for fabrication of halide perovskite single crystal comprising low-temperature solvation process
US12385156B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Mar 1, 2023 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Nov 3, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.