Method and system to introduce bright field imaging at stitching area of high-NA EUV exposure
US12386251B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 5, 2023 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Oct 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first bright field reticle and a second bright field reticle are utilized for a double exposure EUV photolithography process in which exposure areas of the first and second bright field reticles overlap. The first and second reticles each include, respectively, a substrate, a reflective multilayer on the substrate, a main pattern of absorption material on the reflective multilayer, a black border area, and an additional absorption area of the absorption material between the black border and the main pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.