Method for forming active area and method for forming semiconductor structure
US12387932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Feb 7, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming the active area includes the following operations. A semiconductor substrate is provided. A first mask layer and a second mask layer are sequentially formed on a surface of the semiconductor substrate, in which the second mask layer has an initial pattern for forming the active area. A sacrificial layer covering the second mask layer is formed. The sacrificial layer and a portion of the second mask layer are removed to form a third mask layer with a preset thickness, in which the preset thickness is less than an initial thickness of the second mask layer. The active area is formed through the third mask layer and the first mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.