Optoelectronic device

US12388058B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Brandl · Mintraching, DE
• Andreas Dobner · Wenzenbach, DE
• Matthias Goldbach · Dresden, DE
• Sebastian Wittmann · Regensburg, DE
• Uli Hiller · Bad Abbach, DE
• Markus Klein · Glückstadt, DE
• Thomas Schwarz · Rhede, DE
• Andreas Waldschik · Wolmirstedt, DE
• Michael Wittmann · Alteglofsheim, DE
• Matthias Bruckschloegl · Regensburg, DE
• Stefan Groetsch · Bad Abbach, DE
• Rainer Huber · Piding, DE
• Peter Brick · Regensburg, DE
• Ludwig Hofbauer · Regenstauf, DE

Key dates

• Filing date: Dec 3, 2021
• Grant date: Aug 12, 2025
• Expiry date: Nov 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882
• WIPO field: Transport
• WIPO sector: Mechanical engineering

Abstract

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.