Patent · US Active

Acoustic wave device

US12388410B2 · kind B2 · utility

0Cited by
6References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 24, 2022
Grant dateAug 12, 2025
Priority date
Expiry dateSep 4, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H9/25
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

An acoustic wave device includes a support substrate, first and second piezoelectric layers, and an IDT electrode. The first and second piezoelectric layers are on the support substrate. The IDT electrode is on the first piezoelectric layer and includes electrode fingers. The second piezoelectric layer is between the first piezoelectric layer and the support substrate. The first and second piezoelectric layers are made of lithium tantalate or lithium niobate. Euler angles of the second piezoelectric layer are different from Euler angles of the first piezoelectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.