Semiconductor memory device and method for manufacturing the same including a plurality of mutually perpendicular trenches having the same depth
US12389586B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/021
Abstract
A semiconductor device includes a substrate. A method includes the following operations. Multiple first trenches extending in a first direction are formed in the substrate. Multiple second trenches extending in a second direction are formed in the substrate in which the first trenches are formed. The first direction is perpendicular to the second direction. A first depth of a first trench is equal to a second depth of a second trench. A first insulating layer, a conducting layer and a second insulating layer are formed in sequence in the first and second trenches. The conducting layer in the first trench is separated on a cross section in the second direction to form two bit lines connected to sidewalls at either side of the first trench and extending in the first direction. Word lines extending in the second direction are formed on the conducting layer in the first and second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.