Semiconductor device and method for manufacturing semiconductor device
US12389589B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Sep 7, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Mar 5, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A semiconductor device and a method for manufacturing a semiconductor device are provided. The semiconductor device includes a substrate, and a plurality of storage structures stacked on the substrate. Each of the plurality of storage structures includes: a first dielectric layer; at least one channel layer arranged in the first dielectric layer and extending in a first direction, the first dielectric layer being provided with a plurality of first grooves isolating the at least one channel layer; and a capacitor structure covering a sidewall and a bottom surface of each of the plurality of first grooves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.