Semiconductor structure
US12389613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2023 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Apr 24, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including the following components is provided. A first capacitor structure includes first, second, and third electrode layers and first and second dielectric layers. The second electrode layer is disposed on the first electrode layer. The top-view pattern of the second electrode layer partially overlaps the top-view pattern of the first electrode layer to have a first overlapping region. The third electrode layer is disposed on the second electrode layer. The top-view pattern of the third electrode layer partially overlaps the top-view pattern of the second electrode layer to have a second overlapping region. The first overlapping region and the second overlapping region have the same top-view area. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The second dielectric layer is disposed between the second electrode layer and the third electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.