Semiconductor die with a transistor device and method of manufacturing the same
US12389658B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jul 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a semiconductor die with a transistor device, having a source region, a drain region, a body region including a channel region, a gate region, which includes a gate electrode, next to the channel region, for controlling a channel formation, a drift region between the channel region and the drain region, and a field electrode region with a field electrode formed in a field electrode trench, which extends into the drift region, wherein the channel region extends laterally and is aligned vertically with the gate region, and wherein at least a portion of the channel region is arranged vertically above the field electrode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.