Method for producing semiconductor nanoparticles and light-emitting device
US12389724B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 7, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Jan 22, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a method for producing semiconductor nanoparticles. The method includes: providing first semiconductor nanoparticles containing a semiconductor containing an element M1, an element M2 and an element Z, wherein the element M1 is at least one element selected from the group consisting of Ag, Cu, Au and an alkali metal, and contains at least Ag, the element M2 is at least one element selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga, and the element Z contains at least one element selected from the group consisting of S, Se and Te; and heat-treating a mixture containing the first semiconductor nanoparticles, a first compound having a Ga—S bond, a second compound containing Ga and not containing S, and an organic solvent to obtain second semiconductor nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.