Semiconductor device, method for manufacturing same, and substrate
US12389731B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 9, 2022 |
| Grant date | Aug 12, 2025 |
| Priority date | — |
| Expiry date | Nov 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating member; a light-receiving element on a front surface of the insulating member; a light-emitting element on the light-receiving element; a first metal terminal electrically connected to the light-emitting element and provided on a back surface of the insulating member; a switching element mounted on the front surface via a metal pad, the switching element being electrically connected to the light-receiving element; and a second metal terminal provided on the back surface and electrically connected to the switching element via the metal pad. The insulating member has a first thickness in a first direction directed from the back surface toward the front surface. The metal pad has a second thickness in the first direction. The second metal terminal has a third thickness in the first direction. The first thickness is less than a combined thickness of the second and third thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.