Method and system for applying a pattern on a mask layer
US12391034B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2020 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | May 29, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F9/30018
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for applying a pattern on a mask layer includes obtaining an image file representing pixels with a first pixel size in a first direction parallel to an edge of the pixel, and a second pixel size in a second direction perpendicular to the first direction, where the first and second pixel size are the same or different, treating the mask layer such that a plurality of areas with altered physical properties are created in the mask layer, the plurality of areas corresponding to a plurality of pixels of the image file, where the treatment is done such that a first and/or a second area size of an area of said plurality of areas, seen in said first and/or said second direction, is smaller than the first and/or second pixel size, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.