Optical proximity correction method, mask manufacturing method and semiconductor chip manufacturing method using the same
US12393123B2 · kind B2 · utility
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7References
17Claims
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Key dates
| Filing date | May 9, 2022 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Jan 30, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor chip includes designing a layout for a semiconductor chip, performing an optical proximity correction (OPC) on the layout, manufacturing a mask after performing the OPC, and manufacturing the semiconductor chip using the mask, wherein a plurality of OPC shapes corresponding to a rectangular pattern of the mask are included in the mask and at least one of the plurality of OPC shapes includes a multi-edge corner rounding OPC shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.