Method of manufacturing a semiconductor device
US12394666B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2021 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Mar 12, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to example embodiments, a method of manufacturing a semiconductor device is provided. The method includes forming an etching target layer on a substrate; forming a first photoresist layer on the etching target layer; forming a first alignment key under the first photoresist layer and a first alignment pattern aligned in a first direction perpendicular to a top surface of the substrate, by exposing and developing the first photoresist layer; forming a second alignment key under the first photoresist layer and a second alignment pattern aligned in the first direction, by exposing and developing the first photoresist layer; and forming a third alignment key aligned with the first alignment key in the first direction under the first photoresist layer and a fourth alignment key aligned with the second alignment key in the first direction on the etching target layer based on the first and second alignment patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.