Pattern formation method and semiconductor device fabrication method using the same
US12396150B2 · kind B2 · utility
0Cited by
18References
19Claims
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Key dates
| Filing date | Jul 6, 2022 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Nov 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
A pattern formation method includes forming a first capping layer on a substrate, forming a recess that penetrates the first capping layer and an upper portion of the substrate, such that a non-penetrated portion of the first capping layer constitutes a first capping pattern, forming a second capping pattern that covers an inner sidewall of the recess, and forming a stack structure in the recess, such that the stack structure includes first stack patterns and second stack patterns that are alternately stacked, and the second capping pattern is between the substrate and a lateral surface of the stack structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.