Capacitor and manufacturing method thereof, and semiconductor device

US12396182B2 · kind B2 · utility

Assignees

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN
• BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY · CN

Inventors

• Mengkang YU · Hefei, CN
• Xingsong SU · Hefei, CN
• Weiping BAI · Hefei, CN

Key dates

• Filing date: Nov 14, 2022
• Grant date: Aug 19, 2025
• Expiry date: Jan 12, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

The present disclosure provides a capacitor and a manufacturing method thereof, and a semiconductor device. The capacitor includes a plurality of bottom electrodes, a top electrode structure, a dielectric layer, and a gap filling layer, where the top electrode structure is formed on one side of each of the plurality of bottom electrodes, one side of the dielectric layer is in contact with the plurality of bottom electrodes and the other side is in contact with the top electrode structure, and the gap filling layer fills remaining gaps between the plurality of bottom electrodes.