Semiconductor device
US12396197B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Jul 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a barrier layer, a channel layer, a regrowth layer, a vacancy generation region, and a source electrode or a drain electrode. The barrier layer includes a first nitride semiconductor. The channel layer includes a second nitride semiconductor and is bonded to the barrier layer at a first surface. The regrowth layer includes an n-type nitride semiconductor and is provided in a region dug deeper than an interface between the barrier layer and the channel layer from a second surface of the barrier layer. The second surface is on opposite side to the first surface. The vacancy generation region includes a nitrogen-capturing element and is provided in a region of the regrowth layer shallower than the interface between the barrier layer and the channel layer. The source electrode or the drain electrode is provided on the regrowth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.