Photo detection device
US12396275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2022 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Mar 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/139
Abstract
To provide a photo detection device and a manufacturing method thereof, the photo detection device comprising a SPAD in which a substrate-manufacturing cost is kept sufficiently low compared to InGaAs, afterpulsing is less and DCR is also reduced.A photo detection device detecting an incident light from an object, comprising: (i) a P-type silicon (Si) substrate; (ii) a P-type germanium (Ge) layer formed by epitaxial growth on a first surface serving as a front surface of the P-type silicon (Si) substrate; and (iii) a P-type thin film silicon (Si) layer formed on the P-type germanium (Ge) layer, (iv) wherein the P-type thin film silicon (Si) layer is divided into a first region and a second region by a Shallow Trench Isolation (STI), multiple single photon avalanche diodes (SPADs) arranged in an array are formed in the first region, and a CMOS transistor circuit driving the SPADs is formed in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.