Solid-state imaging device and electronic equipment
US12396316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Feb 27, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A read-out speed is increased. A solid-state imaging device (100) according to an embodiment is a solid-state imaging device including a plurality of photoelectric conversion elements (PD3) arrayed in a matrix, and each of the photoelectric conversion elements includes: a first electrode and a second electrode (112, 117) that are disposed such that principal planes thereof face each other; a photoelectric conversion film (113) that is disposed between the first electrode and the second electrode; a semiconductor layer (114) that is disposed between the photoelectric conversion film and the second electrode and is configured such that a first surface is in contact with the photoelectric conversion film and at least a portion of a second surface on a side opposite to the first surface is in contact with the second electrode; an insulating film (316) that is disposed within the semiconductor layer; and a third electrode (115) that is disposed within the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.