Semiconductor component including a dielectric layer

US12396366B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Daniel Monteiro Diniz Reis · Esslingen am Neckar, DE
• Daniel Pantel · Ditzingen, DE
• Frank Schatz · Kornwestheim, DE
• Jochen Tomaschko · Herrenberg, DE
• Mathias Mews · Reutlingen, DE
• Timo Schary · Grötzingen, DE

Key dates

• Filing date: Jun 23, 2020
• Grant date: Aug 19, 2025
• Expiry date: Jan 23, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/87

Abstract

A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.