Plasma chemical vapor deposition process
US12398063B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 28, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Nov 27, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03B37/0183
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method for manufacturing a primary preform for optical fibers via an internal plasma chemical vapor deposition (PCVD) process in a hollow silica substrate tube having a supply side and a discharge side includes depositing doped or non-doped silica layers on the inner surface of the hollow substrate tube by supplying glass-forming gasses to the interior of the hollow substrate tube via the supply side thereof, and by creating a plasma reaction zone in the interior of the hollow substrate tube via microwave radiation having a microwave power, wherein the microwave power is decreased during the depositing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.