High-resistivity ruthenium oxide thin film fabrication and temperature sensor structure with high-resistivity ruthenium oxide thin film
US12398455B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2024 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Jan 24, 2044 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high-resistivity N-doped ruthenium oxide thin film is formed on a substrate by flowing argon and nitrogen gases in a sputter chamber that includes a preconditioned ruthenium oxide sputter target. The method includes forming a plasma and sputter depositing a high-resistivity N-doped ruthenium oxide thin film with a N/Ru atomic ratio between 0.5 and 3.0 and resistivity greater than 0.01 Ω cm on the substrate in the substrate. A high-resistivity H-doped ruthenium oxide thin film is formed on a substrate by first forming an oxygen-rich ruthenium oxide thin film, followed by a hydrogen anneal. A temperature sensor structure includes a high-resistivity ruthenium oxide thin film that is doped with nitrogen or hydrogen and has a resistivity between 0.01 and 1 Ω cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.