Optical dielectric planar waveguide process
US12399321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2024 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Jun 10, 2044 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/308
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.