Patent · US Active

Semiconductor memory device and method of operating semiconductor memory device

US12400729B2 · kind B2 · utility

0Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 11, 2023
Grant dateAug 26, 2025
Priority date
Expiry dateNov 13, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/789
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor memory device includes a plurality of memory cells partitioned into a plurality of row blocks that are each associated with at least one respective row block identity bit within a portion of a row address. A row decoder is provided, which includes a repair controller having a plurality of fuse boxes therein that correspond to respective ones of the plurality of row blocks and include a first fuse box configured to store a first defective address. The repair controller is configured to: (i) activate a first redundancy word-line, which replaces a first defective word-line designated by the first defective address, in response to comparing a first access address with the first defective address output from the first fuse box, during a first mode, and (ii) activate a second redundancy word-line, which replaces a first edge word-line designated by the first access address, in response to comparing the first access address with a first reset address output from the first fuse box, during a second mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.