Power semiconductor device, power semiconductor chip including the same, and method for manufacturing the same
US12402339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Mar 27, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
A power semiconductor device includes a plurality of gate electrodes configured to be recessed from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate, the second surface being opposite to the first surface, an emitter region configured to make contact with a trench and the first surface, being provided between respective ones of the plurality of gate electrodes, and including impurities of a first conductive type, a collector region configured to make contact with the second surface, and including second impurities of a second conductive type opposite to the first conductive type, a floating region extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and including the second impurities, and a trench emitter region interposed between the plurality of gate electrodes in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.