Surface composite film structure with longitudinal transmission cutoff and transverse transmission conduction, and preparation method and application thereof
US12402435B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2025 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Apr 22, 2045 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/129
Abstract
A surface composite film structure with longitudinal transmission cutoff and transverse transmission conduction, and a preparation method and application thereof are provided. The surface composite film structure includes a nano dielectric layer arranged on a surface of a silicon substrate, a silicide layer arranged on the nano dielectric layer and a polycrystalline silicon layer arranged on the silicide layer. A material of the nano dielectric layer is a hydrogenated silicon oxide film, a material of the silicide layer is a hydrogenated carbon nitride silicon film including phosphorus or boron, and a material of the polycrystalline silicon layer is a phosphorus-doped or boron-doped polycrystalline silicon film. The surface composite film structure can achieve an excellent passivation effect and has the characteristics of longitudinal non-conduction and transverse conduction, and the transverse sheet resistance is flexibly adjustable, meeting the performance requirements of new silicon-based semiconductor physical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.