Optoelectronic device, single-photon generator, memory, multiplexer, implant and associated methods
US12402438B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 18, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Oct 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device including a first portion, a second portion, a first contact and a second contact, the first portion being made of a semiconductor having a first doping, the second portion being made of a semiconductor having a second doping different than the first, the first portion and the second portion forming a p/n junction including a depletion zone in the first portion, the contacts being configured so that when an electric voltage (V1) is applied between the contacts, a dimension of the depletion zone depends on a value of the electric voltage, an ionization energy being defined for dopants of the second portion. The device includes an emitter generating a radiation having an energy greater than the ionization energy and illuminating the second portion with the radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.