Flexible memory systems and related methods
US12402547B1 · kind B1 · utility
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2References
20Claims
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Key dates
| Filing date | Feb 8, 2023 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Apr 7, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Implementations of a resistive random access memory may include a bottom electrode; a helical layer of hafnium oxide coupled to the bottom electrode; an isolation layer coupled to the helical layer; and a top electrode coupled to the isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.