Chemical-mechanical polishing liquid
US12404423B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Dec 3, 2020 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jun 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed is a chemical mechanical polishing solution, which contains water, cerium oxide, polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine. The function of auto stop in its true sense can only be achieved by using polyquatemium, carboxylic acid containing a benzene ring and polyvinylamine together. On the blanks, the polishing rates are low, while at the high step heights of patterned silicon chips, high polishing rates are kept. The lower is the step height, the better is the polishing rate inhibited, and thus the function of auto stop is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.