Patent · US Active

Method for growing crystals

US12404601B2 · kind B2 · utility

0Cited by

6References

13Claims

0Family size

Assignee

EBNER Industrieofenbau GmbH · AT

Inventors

Robert Ebner · Leonding, AT
Kanaparin Ariyawong · Leonding, AT
Ghassan Barbar · Neunkirchen, DE
Chih-Yung Hsiung · Leonding, AT

Key dates

Filing date	Sep 23, 2021
Grant date	Sep 2, 2025
Priority date	—
Expiry date	Jun 10, 2042

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/36
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for growing crystals using PVT or PVD or CVD, includes: providing: a chamber for crystal growth, a crucible in the chamber including at least one deposition section with a seed crystal and a base material for crystal growth, at least one temperature monitoring device, a gas supply device and at least one fluid inlet and outlet, and a pressure monitoring device; evacuating the chamber using a pumping device; flushing the chamber with inert gas; heating the chamber to a growth temperature of 2000 to 2400° C. using at least one heating device; decreasing pressure to 0.1 to 100 mbar; supplying a dopant (during a growth process); regulating process parameters in the growth process; increasing chamber pressure at the growth process end; cooling down the chamber; wherein the heating of the chamber from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.