Contact hole

US12406883B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Thomas Bertrams · Dresden, DE
• Maik Stegemann · Freital, DE
• Armin Tilke · Beacon, US
• Sascha Weber · Rippien, DE

Key dates

• Filing date: Dec 19, 2018
• Grant date: Sep 2, 2025
• Expiry date: Aug 10, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor component includes a power semiconductor partial structure having an insulating layer arranged on an upper side of a semiconductor body. A contact hole arranged on an upper side of the insulating layer proceeds from that side, extending at least partly within the insulating layer. An adhesion promoter layer arranged on an upper side of the power semiconductor partial structure at least partly covers the insulating layer upper side and a surface of the contact hole. A tungsten-comprising layer arranged on the adhesion promoter layer at least partly covers the adhesion promoter layer and has a first thickness in a region of the contact hole and dimensioned such that the tungsten-comprising layer fills the contact hole. The tungsten-comprising layer has a second thickness in the region of the insulating layer upper side which is less than the first thickness. A connection layer is arranged on the tungsten-comprising layer.