Characterization of asymmetric material deposition for metrology
US12406891B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2021 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jul 4, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of characterizing asymmetric depositions on a target is provided. The method includes forming at least four asymmetrical petals in a layer on a substrate, and depositing a light-absorbing material on the at least four asymmetrical petals, wherein the light-absorbing material deposits unevenly on a plurality of walls of the at least four asymmetrical petals. The method further includes determining a pattern shift response (PSR) from the light-absorbing material on each of the walls of the at least four asymmetrical petals, and converting the pattern shift response (PSR) to an asymmetry of thicknesses of the light-absorbing material deposited on facing walls of the at least four asymmetrical petals. The method further includes correcting an overlay petal position based on the asymmetry of thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.