Semiconductor devices
US12406905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Apr 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate having power arrangement regions; a first interconnection structure disposed on the semiconductor substrate and including first interconnection patterns and power lines; a second interconnection structure disposed on the semiconductor substrate and including second interconnection patterns; and through-electrodes passing through each of the power arrangement regions and contacting the power lines, wherein the first interconnection patterns include first interconnection lines, wherein the power lines are disposed on a same height level as a first interconnection line, among the first interconnection lines, and are parallel to each other, wherein the power arrangement regions are parallel to each other, and wherein intersection regions, in which the power arrangement regions and the power lines intersect, include a plurality of first active intersection regions, one dummy intersection region, and a plurality of second active intersection regions, sequentially arranged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.