RF switch device including multi-width air gaps
US12406927B2 · kind B2 · utility
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17References
4Claims
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Key dates
| Filing date | Apr 27, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Oct 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF switch device in a stacked configuration and a method of manufacturing the same seek to reduce or eliminate a voltage imbalance, a condition in which different voltages are applied to different stages of the RF switch device, by forming air gaps on or over corresponding gate electrodes, in which each of the air gaps in a single stage has a different width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.