Micro light-emitting diode device
US12406969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | May 21, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AlxGayIn(1-x-y)N layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and the n-type III-nitride layer. x is equal to or greater than about 0.02. The transparent top electrode covers and is in contact with the n-doped AlxGayIn(1-x-y)N layer. A refractive index of the n-doped AlxGayIn(1-x-y)N layer is smaller than a refractive index of the n-type III-nitride layer. A sum of the thicknesses of the n-type III-nitride layer and the n-doped AlxGayIn(1-x-y)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.