Switched inductive storage element to enhance gate drive at turn-off
US12407345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2023 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jan 29, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/168
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A switched inductive storage element to enhance gate drive at turn-off is described herein. An inductive storage element (e.g., an inductor) may be switched between a supply node and a gate node of a gated device (e.g., a low-side device and/or a high-side device). While coupled to the supply node, the inductive storage element may be energized; and subsequently, while coupled to the gate node of the gated device, the inductive storage element may drive the gate node (i.e., the gate of the low-side and/or high-side device) below the local ground potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.