Semiconductor structure and method for manufacturing the same
US12408322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a base, a dielectric layer, a gate structure, and a covering layer. The base includes discrete semiconductor pillars. The semiconductor pillars are disposed at the top of the base and extend in a vertical direction. The dielectric layer covers the sidewall of the semiconductor pillar. The gate structure is disposed in the middle area of the semiconductor pillar. The gate structure includes a gate-all-around structure, the gate-all-around surrounding the semiconductor pillar. A first part of the dielectric layer is disposed between the gate structures and the semiconductor pillars. The covering layer covers the top of the semiconductor pillar and part of the sidewall close to the top. The material of the covering layer includes a boron-containing compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.