Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profiles
US12408349B2 · kind B2 · utility
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Key dates
| Filing date | Jun 8, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jan 7, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric layer. The first electrode contains nitrogen or oxygen and is characterized by a first percentage of nitrogen or oxygen. The second electrode contains nitrogen or oxygen and is characterized by a second percentage of nitrogen or oxygen. The first percentage is different from the second percentage.
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