Semiconductor element and semiconductor device
US12408359B2 · kind B2 · utility
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Key dates
| Filing date | Aug 5, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Aug 3, 2043 |
Classification
- Technology area (CPC —)General
Abstract
Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.