Semiconductor device, semiconductor wafer, and electronic device
US12408383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2024 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Jan 12, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.