Display device including a sensing layer for sensing an external input device and method of drving the same
US12408391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Oct 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes: a substrate including an active region extending in a first direction; a gate electrode extending in a second direction and intersecting the active region, the gate electrode including first electrode layer(s) and a second electrode layer; channel layers spaced apart from each other in a third direction and at least partially surrounded by the gate electrode; source/drain regions, with at least one source/drain region on each side of the gate electrode and electrically connected to the channel layers; and air gap regions in the second electrode layer between the channel layers and between a lowermost channel layer and the active region in the third direction. The first electrode layer(s) or the second electrode layer has a first thickness between adjacent ones of the channel layers in the third direction, and has a second thickness greater than the first thickness on side surfaces of the channel layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.