Semiconductor structure with high integration density and method for manufacturing the same

US12408425B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ta-Chun Lin · Hsinchu, TW
• Ming-Heng Tsai · Taipei, TW
• Huang-Chao Chang · Hsinchu, TW
• Chun-Sheng Liang · 埔鹽鄉, TW
• Chih-Hao Chang · Hsinchu, TW
• Jhon Jhy Liaw · Shanggongguan, TW

Key dates

• Filing date: Feb 15, 2023
• Grant date: Sep 2, 2025
• Expiry date: Apr 17, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.