Photodiode device with improved dark current
US12408449B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Aug 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/189
Abstract
The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.