Apparatus and method for manufacturing metal gate structures
US12410512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2024 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jun 18, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor processing apparatuses and methods are provided in which a pre-clean chamber receives a semiconductor wafer from a metal gate layer deposition chamber and at least partially removes an oxide layer on a metal gate layer. In some embodiments, a semiconductor processing apparatus includes a plurality of metal gate layer deposition chambers. Each of the metal gate layer deposition chambers is configured to form a metal gate layer on a semiconductor wafer. At least one pre-clean chamber of the apparatus is configured to receive the semiconductor wafer from one of the metal gate layer deposition chamber and at least partially remove an oxide layer on the metal gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.