Patent · US Active

Signal processing circuit for tunneling magnetoresistance sensor

US12411188B2 · kind B2 · utility

0Cited by

1References

2Claims

0Family size

Assignee

Wenzhou University · CN

Inventors

Pengjun Wang · Zhejiang, CN
Xiangyu Li · Longbeilingcun, CN
Bo-Yan Chen · Zhejiang, CN
Hao Ye · Fujian, CN

Key dates

Filing date	Dec 15, 2023
Grant date	Sep 9, 2025
Priority date	—
Expiry date	May 27, 2044

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/098
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A signal processing circuit for a tunneling magnetoresistance sensor comprises thirty-eight MOS transistors, two capacitors and ten switches. A first switch, a second switch, a third switch, a fourth switch, a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor form a high-frequency modulation circuit. A fifth switch, a sixth switch, a seventh switch, an eighth switch, a seventeenth transistor, a twenty-second MOS transistor and a twenty-third MOS transistor form a high-frequency demodulation circuit. A signal output by a tunneling magnetoresistance sensor is modulated to a chopping frequency by the high-frequency modulation circuit, and is then demodulated by the high-frequency demodulation circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.