Edge coupler and manufacturing method therefor
US12411286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2021 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Aug 31, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12107
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge coupler and a fabrication method therefor are provided. The method includes: providing a semiconductor-on-insulator substrate, the semiconductor-on-insulator substrate including a first substrate, an insulating layer on the first substrate, and a semiconductor layer on the insulating layer; patterning the semiconductor layer to form a first waveguide; forming a first dielectric layer on the insulating layer; forming a second dielectric layer on the first dielectric layer and the first waveguide; forming a second waveguide on the second dielectric layer; forming a third dielectric layer covering the second waveguide; bonding the third dielectric layer to a carrier substrate on a side of the third dielectric layer away from the second waveguide; removing the first substrate; and forming a fourth dielectric layer on a surface of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.