Method of fabricating a hollow wall for controlling directional deposition of material
US12412743B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a hollow wall for controlling directional deposition of material comprises: forming a layer of resist on a substrate; removing a portion of the resist selectively to form a channel in the resist; forming a layer of an amorphous dielectric material in the channel; and removing the resist to form the hollow wall. The channel has a front surface configured to prevent bending of a corresponding front face of the hollow wall. The hollow wall is useful for controlling deposition of material when fabricating semiconductor-superconductor hybrid devices, for example. By configuring the channel appropriately, bending of the hollow wall can be prevented, allowing for more precise deposition of material. Also provided is a further method of fabricating a hollow wall; and a method of fabricating a device using the hollow walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.