Devices and methods involving activation of buried dopants using ion implantation and post-implantation annealing
US12412744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2020 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Apr 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In certain examples, methods and semiconductor structures are directed to use of a doped buried region (e.g., Mg-dopant) including a III-Nitride material and having a diffusion path (“ion diffusion path”) that includes hydrogen introduced by using ion implantation via at least one ion species. An ion implantation thermal treatment causes hydrogen to diffuse through the ion implanted path and causes activation of the buried region. In more specific examples in which such semiconductor structures have an ohmic contact region at which a source of a transistor interfaces with the buried region, the ohmic contact region is without etching-based damage due at least in part to the post-ion implantation thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.