Semiconductor structure with improved heat dissipation
US12412804B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2022 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Feb 20, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3677
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.