Dilute nitride long-wavelength emitter with improved performance over temperature
US12413048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2022 |
| Grant date | Sep 9, 2025 |
| Priority date | — |
| Expiry date | Jan 23, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.